? semiconductor components industries, llc, 2012 november, 2012 ? rev. 0 1 publication order number: ngtb30n60ihlw/d NGTB30N60IHLWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. the igbt is well suited for half bridge resonant applications. incorporated into the device is a soft and fast co ? packaged free wheeling diode with a low forward voltage. features ? low saturation voltage using trench with fieldstop technology ? low switching loss reduces system power dissipation ? low gate charge ? soft, fast free wheeling diode ? these are pb ? free devices typical applications ? inductive heating ? soft switching absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 60 30 a pulsed collector current, t pulse limited by t jmax i cm 150 a diode forward current @ t c = 25 c @ t c = 100 c i f 60 30 a diode pulsed current, t pulse limited by t jmax i fm 150 a gate ? emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 250 50 w operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340l style 4 c g 30 a, 600 v v cesat = 1.8 v e off = 0.28 mj e device package shipping ordering information NGTB30N60IHLWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram 30n60ihl aywwg g e c
NGTB30N60IHLWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case, for igbt r jc 0.87 c/w thermal resistance junction ? to ? case, for diode r jc 1.46 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j = 150 c v cesat ? ? 1.8 2.2 2.3 ? v gate ? emitter threshold voltage v ge = v ce , i c = 250 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 150 c i ces ? ? ? ? 0.2 2 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v , v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 3100 ? pf output capacitance c oes ? 120 ? reverse transfer capacitance c res ? 80 ? gate charge total v ce = 480 v, i c = 30 a, v ge = 15 v q g 130 nc gate to emitter charge q ge 27 gate to collector charge q gc 65 switching characteristic, inductive load turn ? on delay time t j = 25 c v cc = 400 v, i c = 30 a r g = 10 v ge = 0 v/ 15v t d(on) 70 ns rise time t r 30 turn ? off delay time t d(off) 140 fall time t f 80 turn ? off switching loss e off 0.28 mj turn ? on delay time t j = 150 c v cc = 400 v, i c = 30 a r g = 10 v ge = 0 v/ 15v t d(on) 70 ns rise time t r 32 turn ? off delay time t d(off) 150 fall time t f 100 turn ? off switching loss e off 0.55 mj diode characteristic forward voltage v ge = 0 v, i f = 30 a v ge = 0 v, i f = 30 a, t j = 150 c v f 1.2 1.2 1.4 v reverse recovery time t j = 25 c i f = 30 a, v r = 200 v di f /dt = 200 a/ s t rr 400 ns reverse recovery charge q rr 4500 nc reverse recovery current i rrm 23 a
NGTB30N60IHLWG http://onsemi.com 3 typical characteristics 140 120 100 80 60 40 20 0 012345 8 7 6 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 1. output characteristics v ge = 17 v to 15 v 11 v 10 v 9 v 7 v to 8 v t j = 25 c 13 v v ge = 17 v to 13 v 11 v 10 v 9 v 8 v 7 v t j = 150 c 012345 8 7 6 140 120 100 80 60 40 20 0 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 2. output characteristics 140 120 100 80 60 40 20 0 01 2345 8 7 6 160 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 3. output characteristics t j = ? 55 c v ge = 17 v to 13 v 11 v 10 v 9 v 7 v to 8 v v ge , gate ? emitter voltage (v) i c , collector current (a) figure 4. typical transfer characteristics t j = 25 c t j = 150 c 140 120 100 80 60 40 20 0 048 16 12 ? 75 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 0 ? 25 25 75 125 175 t j , junction temperature ( c) v ce , collector ? emitter voltage (v) figure 5. v ce(sat) vs. t j i c = 60 a i c = 30 a i c = 15 a i c = 5 a 0 10 20 100 90 10000 1000 100 10 80 30 40 70 60 50 v ce , collector ? emitter voltage (v) capacitance (pf) figure 6. typical capacitance c ies c oes c res
NGTB30N60IHLWG http://onsemi.com 4 typical characteristics v f , forward voltage (v) i f , forward current (a) figure 7. diode forward characteristics t j = 25 c t j = 150 c 120 100 80 60 40 20 0 0 0.5 1 2 1.5 2.5 20 q g , gate charge (nc) v ge , gate ? emitter voltage (v) figure 8. typical gate charge 15 10 5 0 0 20 40 60 80 100 120 140 v ce = 480 v t j , junction temperature ( c) e off , turn ? off switching loss (mj) figure 9. switching loss vs. temperature v ce = 400 v v ge = 15 v i c = 30 a r g = 10 0.7 0 20 40 140 120 160 60 80 100 0.6 0.5 0.4 0.3 0.2 0.1 0 t j , junction temperature ( c) switching time (ns) figure 10. switching time vs. temperature 1000 0 20 40 60 80 100 120 140 100 10 1 160 v ce = 400 v v ge = 15 v i c = 30 a r g = 10 t d(off) t f i c , collector current (a) e off , turn ? off switching loss (mj) figure 11. switching loss vs. i c 1.6 81624 5664 32 52 40 v ce = 400 v v ge = 15 v t j = 150 c r g = 10 1.4 1.2 1 0.8 0.6 0.4 0.2 0 i c , collector current (a) switching time (ns) figure 12. switching time vs. i c 1000 100 10 1 v ce = 400 v v ge = 15 v t j = 150 c r g = 10 t d(off) t f 81624 5664 32 52 40
NGTB30N60IHLWG http://onsemi.com 5 typical characteristics r g , gate resistor ( ) figure 13. switching loss vs. r g e off , turn ? off switching loss (mj) 1 5 15 253545 5565 7585 v ce = 400 v v ge = 15 v i c = 30 a t j = 150 c 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 switching time (ns) r g , gate resistor ( ) figure 14. switching time vs. r g 1000 51525354555657585 100 10 1 v ce = 400 v v ge = 15 v i c = 30 a t j = 150 c t d(off) t f v ce , collector ? emitter voltage (v) figure 15. switching loss vs. v ce e off , turn ? off switching loss (mj) 0.9 175 225 275 325 375 425 475 525 575 v ge = 15 v i c = 30 a r g = 10 t j = 150 c 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 switching time (ns) v ce , collector ? emitter voltage (v) figure 16. switching time vs. v ce 1000 100 10 1 175 225 275 325 375 425 475 525 575 t d(off) t f v ge = 15 v i c = 30 a r g = 10 t j = 150 c 1000 1 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 17. safe operating area 10 100 1000 100 10 1 0.1 0.01 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 18. reverse bias safe operating area v ce , collector ? emitter voltage (v) i c , collector current (a) 1000 100 10 1 1 10 100 1000 v ge = 15 v, t c = 125 c
NGTB30N60IHLWG http://onsemi.com 6 typical characteristics 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.87 figure 19. igbt transient thermal impedance r(t) ( c/w) pulse time (sec) 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 20. diode transient thermal impedance pulse time (sec) r(t) ( c/w) r jc = 1.46 50% duty cycle 20% 10% 5% 2% 1% single pulse junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 4 5.48e ? 5 0.002 0.03 0.1 r i ( c/w) 0.04077 0.09054 0.16141 0.21558 0.24842 2.0 0.11759 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.48e ? 4 0.002 0.03 0.1 2.0 r i ( c/w) 0.18019 0.37276 0.45472 0.33236 0.11759
NGTB30N60IHLWG http://onsemi.com 7 figure 21. test circuit for switching characteristics
NGTB30N60IHLWG http://onsemi.com 8 figure 22. definition of turn on waveform
NGTB30N60IHLWG http://onsemi.com 9 figure 23. definition of turn off waveform
NGTB30N60IHLWG http://onsemi.com 10 package dimensions to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb30n60ihlw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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